The D1200 PCIe/NVMe SSD represents a significant leap forward in high-performance flash storage solutions. The Data Center SSD offers high reliability, ultimate performance, and low power consumption for I/O-intensive data center applications such as databases, data storage, cloud computing, and artificial intelligence. With an extended feature set that increases sequential and random write performance, peak efficiency of data center operations is ensured.
Series Name |
D1200 |
Standard & Interface |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
Package |
2.5”, U.3 backwards compatible to U.2 |
Connector |
SFF-8639 U.3 |
Outline Dimensions (L x W x H) |
100.45mm x 69.85mm x 14.8mm |
Flash Type |
3D NAND eTLC |
Density Range |
7.68 TB, 15.36 TB |
Endurance [DWPD] |
> 1.5 for 5 years |
Operating Temperature |
0°C to +70°C |
Storage Temperature |
-40°C to +85°C |
Performance Clusters |
Optimized for highest system performance up to 900k IOPS and 7,000 MB/s |
Voltage |
VCC: 12V (-20%, +10%) |
Average Power |
16.3 W |
DRAM |
DDR4 DRAM |
MTBF |
> 2,000,000 hours |
Data Reliability |
< 1 sector per 10^17 bits |
Features & Tools |
Self-Monitoring, Analysis, and Reporting Technology (S.M.A.R.T., Telemetry) |
The N5200 Gen4 PCIe U.2 SSD is optimized to serve the need for increasingly evolved storage for enterprise and edge data centers. The high performance SSD delivers a low KIOPS/watt performance while supporting excellent Quality of Service (QoS). Furthermore, the N5200 supports a wide range of features for modern enterprise data centers, including hardware-based security, advanced telemetry, data path and power failure protection. This make it an ideal choice for high-performance and mission-critical applications where reliability, durability, and scalability are essential.
Series Name |
N5200 U.2 |
D2200 U.2 |
Standard & Interface |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
PCIe Gen 5.0 / NVMe 2.0b, x4 lanes |
Package |
2.5” |
|
Connector |
SFF-8639 U.2 |
|
Outline Dimensions (L x W x H) |
100.2mm x 69.85mm x 15mm | |
Flash Type |
3D NAND eTLC |
|
Density Range |
1.92 TB, 3.84 TB, 7.68 TB |
7.68 TB, 15.4 TB |
Endurance [DWPD] |
1.5 for 5 years |
1.0 for 5 years |
Operating Temperature |
0°C to +70°C |
|
Storage Temperature |
-40°C to +85°C |
|
Sustained Performance Sequential Read Sequential Write Random Read Random Write |
Up to 7,100 MB/s Up to 4,200 MB/s Up to 1,150 KIOPS Up to 950 KIOPS |
up to 14,000 MB/s up to 10,000 MB/s up to 2,600 KIOPS up to 510 KIOPS |
Voltage |
VCC: 12V (+/-10%) |
VCC: 12 V (-20%, +10%) |
Average Power |
14.5 W | 19.5 W |
DRAM |
DDR4 DRAM |
|
MTBF |
> 2,500,000 hours |
> 2,000,000 hours |
Data Reliability |
< 1 sector per 10^17 bits |
|
Features & Tools |
OCP NVMe Cloud SSD Specification 1.0 support |
powersafe™ Functionality |
Features
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
Products with the Swissbit powersafe feature use reliable tantalum capacitors to store energy so that in case of a sudden power fail the charge will be used to harden the cache content into the NAND flash.
In many industrial applications the data is written to the NAND Flash once and is only read afterwards. For such cases, the firmware can be optimized in order to guarantee the highest possible data retention and less read disturb.
Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.